2N7002E vishay siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-60753erev. b, 15-feb-99 siliconix was formerly a division of temic semiconductors 1 n-channel 60-v mosfet new product
60 3 @ v gs = 10 v 250 low on-resistance: 3 low threshold: 2 v (typ) low input capacitance: 25 pf fast switching speed: 7.5 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. battery operated systems solid-state relays g s d top view 2 3 to-236 (sot-23) 1
drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) t a = 25 c i d 250 continuous drain current (t j = 150 c) t a = 70 c i d 190 ma pulsed drain current a i dm 1300 power dissi p ation t a = 25 c p d 0.35 w power dissi ation t a = 70 c p d 0.22 w maximum junction-to-ambient r thja 357 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70860.
vishay siliconix 2N7002E vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-60753erev. b, 15-feb-99 siliconix was formerly a division of temic semiconductors 2
drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 60 70 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 2 2.5 v gate-body leakage i gss v ds = 0 v, v gs = 15 v 10 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t c = 125 c 500 a on - state drain current c i d(on) v gs = 10 v, v ds = 7.5 v 800 1300 ma on - state drain current c i d( on ) v gs = 4.5 v, v ds = 10 v 500 700 ma drain - source on - resistance c r ds(on) v gs = 10 v, i d = 250 ma 1.7 3 drain - source on - resistance c r ds( on ) v gs = 4.5 v, i d = 200 ma 2.5 4 forward transconductance c g fs v ds = 15 v, i d = 200 ma 250 ms diode forward voltage v sd i s = 200 ma, v gs = 0 v 0.85 1.2 v
total gate charge q g 0.4 0.6 gate-source charge q gs v ds = 30 v, v gs = 10 v i d 250 ma 0.06 nc gate-drain charge q gd d 0.06 input capacitance c iss 25 output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz 6 pf reverse transfer capacitance c rss 1.2
turn - on time t d(on) 7.5 20 turn - on time t r v dd = 30 v, r l = 200 i d 100 ma v gen = 10v 6 ns turn - off time t d(off) i d 100 ma , v gen = 10v r g = 10 7.5 20 ns turn - off time t f 3 notes a. t a = 25 c unless otherwise noted. b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature.
2N7002E vishay siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-60753erev. b, 15-feb-99 siliconix was formerly a division of temic semiconductors 3
0 0.3 0.6 0.9 1.2 01234567 0 0.2 0.4 0.6 0.8 1.0 012345 *)&*) ') '!()!( '$( ' ') '!()!( $, (!()$ +( ) ,%*' %") $, (!()$ +( '!$ *'' $) v ds drain-to-source voltage (v) drain current (a) i d v gs = 10, 9, 8, 7, 6 v 3 v 5 v 4 v v gs gate-to-source voltage (v) drain current (a) i d t j = 55 c 125 c i d drain current (a) v gs gate-to-source voltage (v) 0 1 2 3 4 0246810 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.2 0.4 0.6 0.8 1.0 25 c i d @ 250 ma v gs = 4.5 v v gs = 10 v $, (!()$ +( *$)!%$ #& ')*' (normalized) t j junction temperature ( c) 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 v gs = 10 v @ 250 ma v gs = 4.5 v @ 200 ma ' ( %" %") '!$ + ' #& ')*' variance (v) v gs(th) 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 25 0 25 50 75 100 125 150 i d = 250 a t j junction temperature ( c) r ds(on) onresistance ( ) r ds(on) onresistance ( ) r ds(on) onresistance ( ) w i d @ 75 ma
vishay siliconix 2N7002E vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-60753erev. b, 15-feb-99 siliconix was formerly a division of temic semiconductors 4
"&$ ($ ! "
"$'$ " % v sd source-to-drain voltage (v) source current (a) i s 0.1 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 % $ gate-to-source voltage (v) q g total gate charge (nc) v gs 0 0.2 0.4 0.6 0.8 1.0 0 0.1 0.2 0.3 0.4 0.5 v ds = 30 v i d = 0.25 a # %! v ds drain-to-source voltage (v) c capacitance (pf) 0 8 16 24 32 40 0 5 10 15 20 25 c rss c oss c iss t j = 85 c 25 c 55 c
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